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Spatio-temporal evolution of a pulsed chlorine dischargeMIDHA, V; ECONOMOU, D. J.Plasma sources science & technology (Print). 2000, Vol 9, Num 3, pp 256-269, issn 0963-0252Article

A molecular dynamics simulation of ultrathin oxide films on silicon : Growth by thermal O atoms and sputtering by 100 eV Ar⁺ ions : Special issue on the modeling of collisional or near-collisionless low-temperature plasmasKUBOTA, A; ECONOMOU, D. J.IEEE transactions on plasma science. 1999, Vol 27, Num 5, pp 1416-1425, issn 0093-3813Article

Factors affecting the Cl atom density in a chlorine dischargeDESHMUKH, S. C; ECONOMOU, D. J.Journal of applied physics. 1992, Vol 72, Num 10, pp 4597-4607, issn 0021-8979Article

Theoretical and experimental investigations of chlorine RF glow discharges. II: ExperimentalAYDIL, E. S; ECONOMOU, D. J.Journal of the Electrochemical Society. 1992, Vol 139, Num 5, pp 1406-1412, issn 0013-4651Article

Forced and natural convection effects on the shape evolution of cavities during wet chemical ethcingCHEE BURM SHIN; ECONOMOU, D. J.Journal of the Electrochemical Society. 1991, Vol 138, Num 2, pp 527-538, issn 0013-4651, 12 p.Article

Analysis of a pulsed-plasma chemical vapor deposition reactor with recycleSANG-KYU PARK; ECONOMOU, D. J.Journal of the Electrochemical Society. 1990, Vol 137, Num 7, pp 2103-2116, issn 0013-4651, 14 p.Article

Molecular dynamics simulations of ion-induced rearrangement of ultrathin oxide films on silicon : Special issue on images in plasma scienceKUBOTA, A. A; ECONOMOU, D. J.IEEE transactions on plasma science. 1999, Vol 27, Num 1, pp 106-107, issn 0093-3813Article

Fluid simulations of radio frequency glow discharges : two-dimensional argon discharge including metastablesLYMBEROPOULOS, D. P; ECONOMOU, D. J.Applied physics letters. 1993, Vol 63, Num 18, pp 2478-2480, issn 0003-6951Article

Numerical simulation of a single-wafer isothermal plasma etching reactorSANG-KYU PARK; ECONOMOU, D. J.Journal of the Electrochemical Society. 1990, Vol 137, Num 8, pp 2624-2634, issn 0013-4651, 11 p.Article

Effect of potential field on ion detection and shape evolution of trenches during plasma-assisted etchingECONOMOU, D. J; ALKIRE, R. C.Journal of the Electrochemical Society. 1988, Vol 135, Num 4, pp 941-949, issn 0013-4651Article

Two-dimensional simulation of polysilicon etching with chlorine in a high density plasma reactor : Special issue on modeling and simulation of collisional low-temperature plasmasLYMBEROPOULOS, D. P; ECONOMOU, D. J.IEEE transactions on plasma science. 1995, Vol 23, Num 4, pp 573-580, issn 0093-3813Article

Parametric study of a radio-frequency glow discharge using a continuum modelSANG-KYU PARK; ECONOMOU, D. J.Journal of applied physics. 1990, Vol 68, Num 9, pp 4888-4890, issn 0021-8979, 3 p.Article

A mathematical model for a plasma-assisted downstream etching reactorSANG-KYU PARK; ECONOMOU, D. J.Journal of applied physics. 1989, Vol 66, Num 7, pp 3256-3267, issn 0021-8979, 12 p.Article

Effect of transport and reaction on the shape evolution of cavities during wet chemical etchingCHEE BURM SHIN; ECONOMOU, D. J.Journal of the Electrochemical Society. 1989, Vol 136, Num 7, pp 1997-2004, issn 0013-4651Article

Spatiotemporal electron dynamics in radio-frequency glow discharges : fluid versus dynamic Monte Carlo simulationsLYMBEROPOULOS, D. P; ECONOMOU, D. J.Journal of physics. D, Applied physics (Print). 1995, Vol 28, Num 4, pp 727-737, issn 0022-3727Article

Theoretical and experimental investigations of chlorine RF glow discharges. I: TheoreticalAYDIL, E. S; ECONOMOU, D. J.Journal of the Electrochemical Society. 1992, Vol 139, Num 5, pp 1396-1406, issn 0013-4651Article

Mass transfer by natural and forced convection in open cavitiesCHEE BURM SHIN; ECONOMOU, D. J.International journal of heat and mass transfer. 1990, Vol 33, Num 10, pp 2191-2205, issn 0017-9310Article

Two-phase mass transfer in channel electrolyzers with gas-liquid flowECONOMOU, D. J; ALKIRE, R. C.Journal of the Electrochemical Society. 1985, Vol 132, Num 3, pp 601-608, issn 0013-4651Article

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Deposition of polycrystalline SiGe by surface wave excited plasmaTAKANISHI, Y; OKAYASU, T; TOYODA, H et al.Thin solid films. 2008, Vol 516, Num 11, pp 3554-3557, issn 0040-6090, 4 p.Conference Paper

Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxySAITO, K; NISHIMURA, K; SUZUKI, H et al.Thin solid films. 2008, Vol 516, Num 11, pp 3517-3520, issn 0040-6090, 4 p.Conference Paper

Investigation of reduction in etch rate of isolated holes in SiOCHMOMONOI, Yoshinori; YONEKURA, Kazumasa; IZAWA, Masaru et al.Thin solid films. 2008, Vol 516, Num 11, pp 3564-3567, issn 0040-6090, 4 p.Conference Paper

Low temperature deposition of tin oxide films by inductively coupled plasma assisted chemical vapor depositionLEE, H. Y; KIM, J. N; KIM, Hun et al.Thin solid films. 2008, Vol 516, Num 11, pp 3538-3543, issn 0040-6090, 6 p.Conference Paper

Molecular dynamics simulations for nitridation of organic polymer surfaces due to hydrogen-nitrogen ion beam injectionsYAMASHIRO, Masashi; YAMADA, Hideaki; HAMAGUCHI, Satoshi et al.Thin solid films. 2008, Vol 516, Num 11, pp 3449-3453, issn 0040-6090, 5 p.Conference Paper